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Hasegawa, Mika*; Sugawara, Kenta*; Suto, Ryota*; Sambonsuge, Shota*; Haramoto, Naoki*; Teraoka, Yuden; Yoshigoe, Akitaka; Fukidome, Hirokazu*; Suemitsu, Maki*
no journal, ,
no abstracts in English
Hasegawa, Mika*; Sugawara, Kenta*; Suto, Ryota*; Sambonsuge, Shota*; Haramoto, Naoki*; Teraoka, Yuden; Yoshigoe, Akitaka; Fukidome, Hirokazu*; Suemitsu, Maki*
no journal, ,
no abstracts in English
Arai, Taiki*; Qiao, Y.*; Suzuki, Toshiaki*; Yoshigoe, Akitaka; Motohashi, Mitsuya*
no journal, ,
Si oxide films are currently widely used as insulating materials in electronic devices and biomaterials. The chemical bonding of these films significantly influences the properties of each device, thus it is particularly necessary to understand and control the chemical bonds between Si and O in the films in detail. In this study, the Si oxide films formed by anodic oxidation on Si surfaces in extremely low concentrations of HF solutions were analyzed by X-ray photoelectron spectroscopy on Si2p and F1s spectra. Although the HF concentration is in the order of ppm, the films contain percent order of F atoms, suggesting the formation of Si-F and Si-O-F bonds in the films. It was also found that the different depth profiles for F and O atoms was observed, indicating that the surface reaction processes seem to be different depending on each element.